The Electromagnetic Materials group performs basic and applied research on emerging electronic and optical materials. Optimized infrared detector and electronic materials composed of quantum wells or superlattices are designed using theoretical models based on fundamental physical principles. The resulting bandgap-engineered structures are grown using molecular beam epitaxy or chemical vapor deposition techniques and then characterized using a variety of electrical and optical techniques.

The group maintains a state-of-the-art characterization facility for the analysis of nonlinear optical and wide-bandgap materials such as cadmium germanium arsenide, silicon carbide, and gallium nitride. Test specimen preparation includes the fabrication of state-of-the-art samples of semiconductors, optical materials, and high-temperature superconductors.